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| HAF2002 Silicon N Channel MOS FET Series Power Switching ADE-208-503 A (Z) 2nd. Edition October 1997 Features This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over power consumption, over current etc. * Logic level operation (4 to 6 V Gate drive) * High endurance capability against to the short circuit * Built-in the over temperature shut-down circuit * Latch type shut-down operation (Need 0 voltage recovery) Outline TO-220FM D G Gate resistor Tempe- rature Sencing Circuit Latch Circuit Gate Shut- down Circuit 12 S 3 1. Gate 2. Drain 3. Source HAF2002 Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Note: 1. PW 10s, duty cycle 1 % 2. Value at Ta = 25C Symbol VDSS VGSS VGSS ID I D(pulse) I DR Pch Tch Tstg Note2 Note1 Ratings 60 16 -2.8 20 40 20 30 150 -55 to +150 Unit V V V A A A W C C Typical Operation Characteristics Item Input voltage Symbol VIH VIL Input current (Gate non shut down) I IH1 I IH2 I IL Input current (Gate shut down) Shut down temperature Gate operation voltage I IH(sd)1 I IH(sd)2 Tsd VOP Min 3.5 -- -- -- -- -- -- -- 3.5 Typ -- -- -- -- -- 0.8 0.35 175 -- Max -- 1.2 100 50 1 -- -- -- 13 Unit V V A A A mA mA C V Vi = 8V, VDS = 0 Vi = 3.5V, VDS = 0 Vi = 1.2V, VDS = 0 Vi = 8V, VDS = 0 Vi = 3.5V, VDS = 0 Channel temperature Test Conditions 2 HAF2002 Electrical Characteristics (Ta = 25C) Item Drain current Drain current Drain to source breakdown voltage Gate to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Symbol I D1 I D2 V(BR)DSS V(BR)GSS V(BR)GSS I GSS1 I GSS2 I GSS3 I GSS4 Input current (shut down) I GS(op)1 I GS(op)2 Zero gate voltege drain current Gate to source cutoff voltage Static drain to source on state resistance Static drain to source on state resistance Forward transfer admittance Output capacitance I DSS VGS(off) RDS(on) RDS(on) |yfs| Coss Min 10 -- 60 16 -2.8 -- -- -- -- -- -- -- 1.0 -- -- 6 -- Typ -- -- -- -- -- -- -- -- -- 0.8 0.35 -- -- 50 30 12 630 Max -- 10 -- -- -- 100 50 1 -100 -- -- 250 2.25 65 43 -- -- Unit A mA V V V A A A A mA mA A V m m S pF s s s s V I F = 20A, VGS = 0 I F = 20A, VGS = 0 diF/ dt =50A/s t os1 t os2 -- -- 1.8 0.7 -- -- ms ms VGS = 5V, VDD = 12V VGS = 5V, VDD = 24V Test Conditions VGS = 3.5V, VDS = 2V VGS = 1.2V, VDS = 2V I D = 10mA, VGS = 0 I G = 100A, VDS = 0 I G = -100A, VDS = 0 VGS = 8V, VDS = 0 VGS = 3.5V, VDS = 0 VGS = 1.2V, VDS = 0 VGS = -2.4V, VDS = 0 VGS = 8V, VDS = 0 VGS = 3.5V, VDS = 0 VDS = 50 V, VGS = 0 I D = 1mA, VDS = 10V I D = 10A, VGS = 4V Note3 I D = 10A, VGS = 10V Note3 I D = 10A, VDS = 10V Note3 VDS = 10V , VGS = 0 f = 1 MHz Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time Over load shut down operation time Note: Note4 t d(on) tr t d(off) tf VDF t rr -- -- -- -- -- 7.5 29 34 26 1.0 -- -- -- -- -- I D = 5A, VGS = 5V RL = 6 -- 110 -- ns 3. Pulse test 4. Include the time shift based on increasing of channel temperature when operate under over load condition. See characteristic curve of HAF2001. 3 HAF2002 Main Characteristics Power vs. Temperature Derating 40 500 Maximum Safe Operation Area Pch (W) 30 I D (A) Thermal shut down 200 Operation area 100 50 20 10 5 2 1 0.5 0.3 Operation in this area is limited by R DS(on) 20 s 10 0 s Channel Dissipation Drain Current 20 DC Op PW 1m era =1 s tio 0m n( s 10 Tc = 25 C ) Ta = 25 C 0.5 1 2 5 10 20 50 100 (V) DS Drain to Source Voltage V 0 50 100 150 200 Case Temperature Tc (C) 4 HAF2002 Normalized Transient Thermal Impedance vs. Pulse Width 10 Normalized Transient Thermal Impedance g s (t) 1 D=1 0.5 0.2 Tc = 25C 0.1 0.1 0.05 0.02 0.01 lse pu ot 1sh q ch - c(t) = g s (t) * q ch - c q ch - c = 4.17 C/W, Tc = 25 C PDM PW T 0.01 D= PW T 0.001 10 100 1m 10 m Pulse Width 100 m PW (S) 1 10 Switching Time Test Circuit VGS Monitor D.U.T. RL VGS VGS 5V 50W V DD = 30 V Vout 10% 10% Vout Monitor Waveform 90% 10% 90% td(off) tf 90% td(on) tr 5 HAF2002 Package Dimensions Unit: mm 10.0 0.3 7.0 0.3 f 3.2 0.2 2.8 0.2 2.5 0.2 2.0 0.3 5.0 0.3 2.7 0.7 0.1 2.54 0.5 2.54 0.5 0.5 0.1 Hitachi Code EIAJ JEDEC TO-220FM SC-67 -- 6 14.0 1.0 1.2 0.2 1.4 0.2 12.0 0.3 4.45 0.3 17.0 0.3 0.6 Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party's rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi's sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi's sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 URL NorthAmerica : http:semiconductor.hitachi.com/ Europe : http://www.hitachi-eu.com/hel/ecg Asia (Singapore) : http://www.has.hitachi.com.sg/grp3/sicd/index.htm Asia (Taiwan) : http://www.hitachi.com.tw/E/Product/SICD_Frame.htm Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm Japan : http://www.hitachi.co.jp/Sicd/indx.htm For further information write to: Hitachi Semiconductor (America) Inc. 179 East Tasman Drive, San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe GmbH Electronic components Group Dornacher Strae 3 D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 778322 Hitachi Asia Pte. Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533 Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: <886> (2) 2718-3666 Fax: <886> (2) 2718-8180 Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Sha Tsui, Kowloon, Hong Kong Tel: <852> (2) 735 9218 Fax: <852> (2) 730 0281 Telex: 40815 HITEC HX Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan. |
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